CP245 데이터시트 - Central Semiconductor
제조사
Central Semiconductor
PROCESS DETAILS
Process MULTIEPITAXIAL MESA
Die Size 120 x 145 MILS
Die Thickness 13 MILS
Base Bonding Pad Area 20 x 45 MILS
Emitter Bonding Pad Area 14 x 70 MILS
Top Side Metalization Al - 50,000Å
Back Side Metalization Cr / Ni / Ag - 10,000Å
Power Transistor PNP, 8.0A Power Transistor Chip
Central Semiconductor
Power Transistor NPN - Silicon Power Transistor Chip ( Rev : 2003 )
Central Semiconductor
Power Transistor NPN - Silicon Power Transistor Chip
Central Semiconductor
Power Transistor NPN- Silicon Power Transistor Chip
Central Semiconductor
Power Transistor NPN - Silicon Power Transistor Chip
Central Semiconductor
Power Transistor NPN - Silicon Power Transistor Chip
Central Semiconductor
Power Transistor NPN - Silicon Power Transistor Chip
Central Semiconductor
Power Transistor NPN - Darlington Chip
Central Semiconductor
Power Transistor NPN - Darlington Chip
Central Semiconductor
Power Transistor NPN- High Voltage Transistor Chip
Central Semiconductor
