Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

FEATUREs
• Very low collector-to-emitter saturation voltage
• Fast switching speed
• High current gain characteristic
• Large current capability
• Pb-free package

APPLICATIONs
• CCFL drivers
• Voltage regulators
• Relay drivers
• High efficiency low voltage switching applications