BSS84AKM 데이터시트 - NXP Semiconductors.
제조사

NXP Semiconductors.
General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
FEATUREs and benefits
■ Logic-level compatible
■ Very fast switching
■ Trench MOSFET technology
■ ESD protection up to 1 kV
■ AEC-Q101 qualified
APPLICATIONs
■ Relay driver
■ High-speed line driver
■ High-side loadswitch
■ Switching circuits
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
50 V, 150 mA P-channel Trench MOSFET
NXP Semiconductors.
50 V, 150 mA P-channel Trench MOSFET
NXP Semiconductors.
50 V, 180 mA P-channel Trench MOSFET
NXP Semiconductors.
30 V, P-channel Trench MOSFET
NXP Semiconductors.
60 V, P-channel Trench MOSFET
Nexperia B.V. All rights reserved
20 V, P-channel Trench MOSFET
Nexperia B.V. All rights reserved
20 V, P-channel Trench MOSFET
NXP Semiconductors.
Power MOSFET 130 mA, 50 V
ON Semiconductor
20 V, P-channel Trench MOSFET
NXP Semiconductors.
Power MOSFET 200 mA, 50 V ( Rev : 2019 )
ON Semiconductor