Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

FEATUREs and Benefits:
■ Advanced MOSFET process technology
■ Special designed for PWM, load switching and
   general purpose applications
■ Ultra low on-resistance with low gate charge
■ Fast switching and reverse body recovery
■ ESD Rating： 1000V HBM
■ 150℃ operating temperature