BSM150GB170DN2E3166 데이터시트 - Infineon Technologies
제조사

Infineon Technologies
IGBT Power Module
Preliminary data
• Half-bridge
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate
• RG on,min = 10 Ohm
Page Link's:
1
2
3
4
5
6
7
8
9
IGBT Power Module
Siemens AG
IGBT Power Module
Siemens AG
IGBT Power Module
Siemens AG
IGBT Power Module
Siemens AG
IGBT Power Module
Siemens AG
IGBT Power Module
eupec GmbH
IGBT Power Module
eupec GmbH
IGBT Power Module
Infineon Technologies
IGBT Power Module
Infineon Technologies
IGBT Power Module
Infineon Technologies