
ROHM Semiconductor
General Description
BR34E02-3 is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect)
FEATUREs
256×8 bit Architecture Serial EEPROM
Wide Operating Voltage Range: 1.7V to 5.5V
Two-Wire Serial Interface
Self-Timed Erase and Write Cycle
Page Write Function (16byte)
Write Protect Mode
Settable Reversible Write Protect Function : 00h-7Fh
Write Protect 1 (Onetime Rom) : 00h-7Fh
Write Protect 2 (Hardwire WP PIN) : 00h-FFh
Low Power consumption
Write (at 1.7V) : 0.4mA (typ)
Read (at 1.7V) : 0.1mA (typ)
Standby (at 1.7V) : 0.1µA (typ)
Prevention of Write Mistake
Write Protect Feature (WP pin)
Prevention of Write Mistake at Low Voltage
High Reliability Fine Pattern CMOS Technology
More than 1 million write cycles
More than 40 years data retention
Noise Reduction Filtered Inputs in SCL / SDA
Initial delivery state FFh