General description
10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.

FEATUREs
■ Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
   sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
   CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and
   an IDq of 130 mA:
■ Qualified up to a maximum VDS operation of 32 V
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation
■ Internally matched for ease of use
■ Low gold plating thickness on leads
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

APPLICATIONs
■ RF power amplifiers for base stations and multi carrier applications in the
   3400 MHz to 3600 MHz frequency range