DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap. All leads are isolated from the flange.
A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the handbook General section for further information.

FEATURES
• High power gain
• Low intermodulation distortion
• Easy power control
• Good thermal stability
• Withstands full load mismatch.

APPLICATIONS
• Designed for industrial and military applications in the HF/VHF frequency range.