General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package.
The BFU530W is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

FEATUREs and benefits
■ Low noise, high breakdown RF transistor
■ AEC-Q101 qualified
■ Minimum noise figure (NFmin) = 0.6 dB at 900 MHz
■ Maximum stable gain 18.5 dB at 900 MHz
■ 11 GHz fT silicon technology

APPLICATIONs
■ Applications requiring high supply voltages and high breakdown voltages
■ Broadband amplifiers up to 2 GHz
■ Low noise amplifiers for ISM applications
■ ISM band oscillators