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BD535 PDF
BD535 데이터시트 - New Jersey Semiconductor
제조사
New Jersey Semiconductor
DESCRIPTION
• DC Current Gain -
: hFE = 40@lc=0.5A
• Collector-Emitter Sustaining Voltage-
: VCEo(sus)= 60V(Min)
• Complement to Type BD536
APPLICATIONS
• Designed for use in medium power linear and switching
applications
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
