BD243CG(2011) 데이터시트 - ON Semiconductor
제조사

ON Semiconductor
Complementary Silicon Plastic Power Transistors
These devices are designed for use in general purpose amplifier and switching applications.
FEATUREs
• Collector − Emitter Saturation Voltage −
VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc
• Collector Emitter Sustaining Voltage −
VCEO(sus)
= 80 Vdc (Min) − BD243B, BD244B
= 100 Vdc (Min) − BD243C, BD244C
• High Current Gain Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
• Pb−Free Packages are Available*
3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 28 WATTS
ON Semiconductor
20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS, 160 WATTS
ON Semiconductor
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS(80 - 100 VOLTS 200 WATTS)
Motorola => Freescale
3 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 40 WATTS
Mospec Semiconductor
25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 125 WATTS
Mospec Semiconductor
3 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 40 WATTS
Boca Semiconductor
3 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 40 WATTS
New Jersey Semiconductor
2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS
ON Semiconductor
2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS
Motorola => Freescale
2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS
ON Semiconductor