BB102M 데이터시트 - Renesas Electronics
제조사
Renesas Electronics
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz)
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143Rmod)
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Build in Biasing Circuit MOS FET IC UHF RF Amplifier
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Build in Biasing Circuit MOS FET IC UHF RF Amplifier
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Build in Biasing Circuit MOS FET IC UHF RF Amplifier
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Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Electronics
