HOME >>> Inchange Semiconductor >>>
B765 PDF
B765 데이터시트 - Inchange Semiconductor
제조사

Inchange Semiconductor
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= -1.5A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -120V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -1.5A
·Complement to Type 2SD864
APPLICATIONS
·Medium speed and power switching applications.
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor