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B1100 데이터시트 - Inchange Semiconductor
제조사
Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
V(BR)CEO= -100V(Min)
• High DC Current Gain-
: hFE= 1000(Min)@ IC= -10A
• Complement to Type 2SD1591
APPLICATIONS
• Designed for audio frequency power amplifier and low
speed high current switching industrial use.
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
