B1067(2006) 데이터시트 - Toshiba
제조사

Toshiba
Micro-Moter Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
• High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)
• Low saturation voltage: VCE (sat) = −1.5 V (max)
(IC = −1 A, IB = −1 mA)
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 1999 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington)
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington)
Toshiba