Description
Specifically designed for Automotive applications, these HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

FEATUREs
 • Advanced Planar Technology
 • Low On-Resistance
 • Logic Level Gate Drive
 • Dual N and P Channel MOSFET
 • Surface Mount
 • Fully Avalanche Rated
 • Automotive[Q101] Qualified *
 • Lead-Free, RoHS Compliant