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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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AQV227N(V2) 데이터시트 - Panasonic Corporation

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AQV227N

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FEATURES
1. PhotoMOS relay with high response speed, low leakage current and low On resistance
2. Low capacitance between output terminals ensures high response speed:
   The capacitance between output terminals is small, typically 10 pF. This enables for a fast operation speed of 200 µs.
3. High sensitivity and low On resistance
   Maximum 0.1 A of load current can be controlled with input current of 5 mA. The On resistance is less than our conventional models. With no metallic contacts, the PhotoMOS relay has stable switching characteristics.
4. Low-level off state leakage current
   The SSR has an off state leakage current of several milliamperes, whereas the PhotoMOS relay has only 30 pA even with the rated load voltage of 200 V (AQV227N).
5. Controls low-level analog signals
   PhotoMOS relay features extremely low closed-circuit offset voltages to enable control of small analog signals without distortion.
6. Low terminals electromotive force (approx. 1 µV)

TYPICAL APPLICATIONS
• Measuring devices
• Scanner, IC checker, Board tester

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