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APT15GN120BDQ1 데이터시트 - Microsemi Corporation

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APT15GN120BDQ1

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Microsemi
Microsemi Corporation 

Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. Low gate charge simplifi es gate drive design and minimizes losses.

• 1200V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling


APPLICATIONs: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS


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