부품명
AO8818
Other PDF
PDF
page
4 Pages
File Size
478.5 kB
제조사
Alpha and Omega Semiconductor
AO8818(V2) 데이터시트 - Alpha and Omega Semiconductor
Alpha and Omega Semiconductor
General Description
The AO8818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration. AO8818 is Pb-free (meets ROHS & Sony 259 specifications).
FEATUREs
VDS (V) = 30V
ID = 7A (VGS = 10V)
RDS(ON) < 18mΩ (VGS = 10V)
RDS(ON) < 20mΩ (VGS = 4.5V)
RDS(ON) < 21mΩ (VGS = 4V)
RDS(ON) < 24mΩ (VGS = 3.1V)
RDS(ON) < 27mΩ (VGS = 2.5V)
RDS(ON) < 58mΩ (VGS = 1.8V)
ESD Rating: 1500V HBM
부품명
상세내역
보기
제조사
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor ( Rev : 2003 )
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Share Link: 