General Description
The AO4618 uses advanced trench technology to provide excellent RDS(ON)and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter application

FEATUREs
N-Channel              P-Channel
VDS= 40V              -40V
ID= 8A (VGS=10V) -  7A (VGS=-10V)
RDS(ON)                RDS(ON)
< 19mΩ(VGS=10V)  < 23mΩ(VGS=-10V)
< 27mΩ(VGS=4.5V)  < 30mΩ(VGS=-4.5V)