GENERAL DESCRIPTION
The Am29LV128MH/L is a 128 Mbit, 3.0 volt single power supply flash memory devices organized as 8,388,608 words or 16,777,216 bytes. The device has a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed either in the host system or in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Single power supply operation
   — 3 volt read, erase, and program operations
■ VersatileI/O™ control
   — Device generates data output voltages and tolerates data input voltages on the CE# and DQ inputs/outputs as determined by the voltage on the VIO pin; operates from 1.65 to 3.6 V
■ Manufactured on 0.23 µm MirrorBit process technology
■ Secured Silicon Sector region
   — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
— May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
   — Two hundred fifty-six 32 Kword (64 Kbyte) sectors
■ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection
■ Minimum 100,000 erase cycle guarantee per sector
■ 20-year data retention at 125°C

PERFORMANCE CHARACTERISTICS
■ High performance
   — 90 ns access time
   — 25 ns page read times
   — 0.5 s typical sector erase time
   — 15 s typical effective write buffer word programming time: 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
   — 4-word/8-byte page read buffer
   — 16-word/32-byte write buffer
■ Low power consumption (typical values at 3.0 V, 5 MHz)
   — 13 mA typical active read current
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
■ Package options
   — 56-pin TSOP
   — 64-ball Fortified BGA

SOFTWARE & HARDWARE FEATURES
■ Software features
   — Program Suspend & Resume: read other sectors before programming operation is completed
   — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
   — Data# polling & toggle bits provide status
   — Unlock Bypass Program command reduces overall multiple-word or byte programming time
   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
■ Hardware features
   — Sector Group Protection: hardware-level method of preventing write operations within a sector group
   — Temporary Sector Group Unprotect: VID-level method of changing code in locked sector groups
   — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings
   — Hardware reset input (RESET#) resets device
   — Ready/Busy# output (RY/BY#) detects program or erase cycle completion