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AM29DL324GB120EF 데이터시트 - Advanced Micro Devices

AM29DL32XG image

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AM29DL324GB120EF

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58 Pages

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AMD
Advanced Micro Devices 

GENERAL DESCRIPTION
   The Am29DL32xG family consists of 32 megabit, 3.0 volt-only flash memory devices, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on DQ15–DQ0; byte mode data appears on DQ7–DQ0. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
◾ Simultaneous Read/Write operations
   — Data can be continuously read from one bank while
      executing erase/program functions in other bank
   — Zero latency between read and write operations
◾ Multiple bank architectures
   — Three devices available with different bank sizes
      (refer to Table 3)
◾ 256-byte SecSi™ (Secured Silicon) Sector
   — Factory locked and identifiable: 16 bytes available for
      secure, random factory Electronic Serial Number;
      verifiable as factory locked through autoselect
      function. ExpressFlash option allows entire sector to
      be available for factory-secured data
   — Customer lockable: One time programmable. Once
      locked, data cannot be changed.
◾ Zero Power Operation
   — Sophisticated power management circuits reduce
      power consumed during inactive periods to nearly
      zero
◾ Package options
   — 63-ball FBGA
   — 48-ball FBGA
   — 48-pin TSOP
   — 64-ball Fortified BGA
◾ Top or bottom boot block
◾ Manufactured on 0.17 µm process technology
◾ Compatible with JEDEC standards
   — Pinout and software compatible with
      single-power-supply flash standard

PERFORMANCE CHARACTERISTICS
◾ High performance
   — Access time as fast 70 ns
   — Program time: 4 µs/word typical utilizing Accelerate
      function
◾ Ultra low power consumption (typical values)
   — 2 mA active read current at 1 MHz
   — 10 mA active read current at 5 MHz
   — 200 nA in standby or automatic sleep mode
◾ Minimum 1 million erase cycles guaranteed per
   sector
◾ 20 year data retention at 125°C
   — Reliable operation for the life of the system


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