
Advanced Micro Devices
GENERAL DESCRIPTION
The Am29DL32xG family consists of 32 megabit, 3.0 volt-only flash memory devices, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on DQ15–DQ0; byte mode data appears on DQ7–DQ0. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers.
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
◾ Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
◾ Multiple bank architectures
— Three devices available with different bank sizes
(refer to Table 3)
◾ 256-byte SecSi™ (Secured Silicon) Sector
— Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
— Customer lockable: One time programmable. Once
locked, data cannot be changed.
◾ Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero
◾ Package options
— 63-ball FBGA
— 48-ball FBGA
— 48-pin TSOP
— 64-ball Fortified BGA
◾ Top or bottom boot block
◾ Manufactured on 0.17 µm process technology
◾ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
◾ High performance
— Access time as fast 70 ns
— Program time: 4 µs/word typical utilizing Accelerate
function
◾ Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
◾ Minimum 1 million erase cycles guaranteed per
sector
◾ 20 year data retention at 125°C
— Reliable operation for the life of the system