DESCRIPTION
   AM2317A is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package.
   The AM2317A is available in SOT-23S package.

FEATURES
● VDS = -20V, ID = -4.2A
   RDS(ON)=38mΩ(Typ.)@VGS=-10V
   RDS(ON)=45mΩ(Typ.)@VGS=-4.5V
   RDS(ON)=60mΩ(Typ.)@VGS=-2.5V
   RDS(ON)=80mΩ(Typ.)@VGS=-1.8V
● Fast switch
● 1.8V Low gate drive applications
● High power and current handling capability
● Available in SOT-23S Package

APPLICATIONS
● Hand-Held Instruments
● Load Switch