PRODUCT DESCRIPTION
The UT28F256LV amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256LV PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256LV. The combination of radiation-hardness, fast access time, and low power consumption make the UT28F256LV ideal for high speed systems designed for operation in radiation environments.

FEATURES
Programmable, read-only, asynchronous, radiation hardened, 32K x 8 memory
- Supported by industry standard programmer
65ns maximum address access time (-55^oC to +125^oC)
Three-state data bus
Low operating and standby current
- Operating: 50.0mA maximum @15.4MHz
· Derating: 1.5mA/MHz
- Standby: 1.0mA maximum (post-rad)
Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019
- Total dose: 1E6 rad(Si)
-  LET_TH (0.25) ~ 100 MeV-cm²/mg
-  SEL Immune  >128 MeV-cm²/mg
- Saturated Cross Section cm2 per bit, 1.0E-11
- 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion
- Memory cell LET threshold: >128 MeV-cm²/mg
QML Q & V compliant part
- AC and DC testing at factory
Packaging options:
- 28-lead 50-mil center flatpack (0.490 x 0.74)
- 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory
VDD : 3.0Vto 3.6V
Standard Microcircuit Drawing 5962-01517