410N30N 데이터시트 - Infineon Technologies
제조사

Infineon Technologies
Features
• N-Channel, normal level
• Fast Diode with reduced Qrr
• Optimized for hard commutation ruggedness
• Very low on-resistance RDS(on)
• 175°C operating temperature
• Pb-free lead plating : RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
300V NPN MEDIUM POWER TRANSISTOR IN SOT223
Diodes Incorporated.
300V PNP MEDIUM POWER TRANSISTOR IN SOT223 ( Rev : 2015 )
Diodes Incorporated.
300V PNP MEDIUM POWER TRANSISTOR IN SOT223
Diodes Incorporated.
300V NPN MEDIUM POWER TRANSISTOR IN SOT223 ( Rev : 2015 )
Diodes Incorporated.
Chroma Amplifier Transistor (300V, 0.1A)
Unspecified
Chroma amplifier transistor (300V, 0.1A) ( Rev : 2012 )
ROHM Semiconductor
Chroma Amplifier Transistor (300V, 0.1A)
ROHM Semiconductor
300V PDP IGBT
Fairchild Semiconductor
300V PDP IGBT
Fairchild Semiconductor
Chroma amplifier transistor (300V,100mA) ( Rev : 2016 )
ROHM Semiconductor