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40CDQ 데이터시트 - New Jersey Semiconductor

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40CDQ

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2 Pages

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NJSEMI
New Jersey Semiconductor 

Description/Features
The 40COQ and 60CDQ Dual Schottky Rectifier Series and SD241 employ the "830" process which results In a very low ratio of reverie leakage current to junction temperature. In addition to offering Improvements In reliability and performance, they ere rugged device* with a guaranteed repetitive peak reverse voltage capability, and excellent ability to withstand reverie energy transients, They can be used I both existing and newdesigns,

■ 176°CTj operation
■ 100% reverse energy tested (each (unction)
■ 400A and 500A surge,60 Hi, onecycle (per (unction)
■ Extremely low reverse leakage: 10 mA <5> 25°C
■ No voltagederating of VR^UM over temperature range
■ A guaranteed repetitive peak reverse voltege capability for short pulses which Is 20% above Vp^^
■ High power supply reliability
■ Minimizes problem of thermel runeway
■ TO-204AE (Modified TO-3) CMS Style available (60CDQ series)
■ Can be supplied to meet strlpgent military, aerospace ond other high-reliability requirements.

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