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3SK318
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Renesas Electronics
3SK318 데이터시트 - Renesas Electronics
Renesas Electronics
Features
• Low noise characteristics;
(NF= 1.4 dB typ. at f= 900 MHz)
• Excellent cross modulation characteristics
• Capable low voltage operation; +B= 5V
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제조사
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
Hitachi -> Renesas Electronics
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