3DD13002 데이터시트 - Transys Electronics Limited
제조사
Transys Electronics Limited
FEATURES
Power dissipation
PCM : 1.25 W（ Tamb=25℃）
Collector current
ICM : 1 A
Collector-base voltage
V(BR)CBO : 600 V
Operating and storage junction temperature range
TJ， Tstg: -55℃ to +150℃
NPN - PNP Plastic-Encapsulated Transistors
Secos Corporation.
Plastic-Encapsulated Transistors
Transys Electronics Limited
Plastic-Encapsulated Transistors
Transys Electronics Limited
TO-92 Plastic-Encapsulated NPN Transistors
Transys Electronics Limited
TO-220 Plastic-Encapsulated NPN Transistors
Transys Electronics Limited
TO-220 Plastic-Encapsulated NPN Transistors
Transys Electronics Limited
TO-220 Plastic-Encapsulated NPN Transistors
Transys Electronics Limited
NPN TO-92 Plastic-Encapsulated Transistors
Transys Electronics Limited
TO-252 Plastic-Encapsulated NPN Transistors
Transys Electronics Limited
TO-220 Plastic-Encapsulated NPN Transistors
Transys Electronics Limited
