부품명
30G120ASW
Other PDF
no available.
PDF
page
4 Pages
File Size
91 kB
제조사
Advanced Power Electronics Corp
30G120ASW 데이터시트 - Advanced Power Electronics Corp
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
FEATUREs
▼ High Speed Switching
▼ Low Saturation Voltage
VCE(sat)=2.9V@IC=30A
▼ CO-PAK, IGBT With FRD
▼ RoHS Compliant
부품명
상세내역
보기
제조사
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. ( Rev : 2015 )
Advanced Power Electronics Corp
Share Link: 