Description
This device is a high voltage fast-switching NPN power transistor. It is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.

FEATUREs
■ High voltage capability
■ Fast switching speed

APPLICATIONs
■ Lighting
■ Switch mode power supply