Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

FEATUREs
■ High breakdown voltage VCEO = 250 V
■ Complementary to 2ST2121
■ Typical ft = 25 MHz
■ Fully characterized at 125 °C

APPLICATION
■ Audio power amplifier