2SK3714 데이터시트 - Renesas Electronics
제조사

Renesas Electronics
DESCRIPTION
The 2SK3714 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Super low on-state resistance
RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 25 A)
RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 25 A)
• Low Ciss: Ciss = 3200 pF TYP.
• Built-in gate protection diode
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics