2SK364(1997) 데이터시트 - Toshiba
제조사
Toshiba
FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND
IMPEDANCE CONVERTER APPLICATIONS
• High Breakdown Voltage: VGDS = −40 V
• High Input Impedance: IGSS = −1.0 nA (Max.) (VGS = −30 V)
• Low RDS (ON): RDS (ON) = 50 Ω (Typ.) (IDSS = 5 mA)
• Complementary to 2SJ104
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 1997 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
