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2SK3378 PDF
2SK3378 데이터시트 - Hitachi -> Renesas Electronics
제조사
Hitachi -> Renesas Electronics
Features
• Low on-resistance
RDS=2.7Ω typ. (VGS= 10 V , ID= 50 mA)
RDS= 4.7Ω typ. (VGS= 4 V , ID= 20 mA)
• 4 V gate drive device.
• Small package (CMPAK)
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET HIGH SPEED SWITCHING
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
