2SK3348 데이터시트 - Renesas Electronics
제조사
Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
FEATUREs
• Low on-resistance
RDS= 1.6 Ωtyp. (VGS= 4 V , ID= 50 mA)
RDS= 2.2 Ωtyp. (VGS= 2.5 V , ID= 50 mA)
• 2.5 V gate drive device.
• Small package (CMPAK)
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Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET HIGH SPEED SWITCHING
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
