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2SK3316
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Toshiba
2SK3316 데이터시트 - Toshiba
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Switching Regulator Applications
● Fast reverse recovery time : trr = 60 ns (typ.)
● Built-in high-speed free-wheeling diode
● Low drain−source ON resistance : RDS (ON) = 1.6 Ω (typ.)
● High forward transfer admittance : |Yfs| = 3.8 S (typ.)
● Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
● Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) ( Rev : 2006 )
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) ( Rev : 2006 )
Toshiba
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