2SK3125(2002) 데이터시트 - Toshiba
제조사

Toshiba
DC-DC Converter, Relay Drive and Motor Drive Applications
• Low drain-source ON resistance: RDS (ON) = 5.3 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 60 S (typ.)
• Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)
• Enhancement-model: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA)
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2005 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2005 )
Toshiba