2SK2884(1999) 데이터시트 - Toshiba
제조사

Toshiba
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS
CHOPPER REGULATOR, DC−DC CONVERTER APPLICATIONS
● Low Drain−Source ON Resistance : RDS (ON) = 1.9 Ω (Typ.)
● High Forward Transfer Admittance : |Yfs| = 3.8 S (Typ.)
● Low Leakage Current : IDSS = 100 μA (Max.) (VDS = 640 V)
● Enhancement-Mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) ( Rev : 1998 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2004 )
Toshiba