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2SK2604
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Toshiba
2SK2604(2006) 데이터시트 - Toshiba
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Switching Regulator Applications
• Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.)
• High forward transfer admittance : |Yfs| = 3.8 S (typ.)
• Low leakage current : IDSS = 100 μA (max) (VDS = 640 V)
• Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) ( Rev : 1998 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) ( Rev : 2006 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) ( Rev : 2006 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) ( Rev : 2009 )
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