2SK2231(1998) 데이터시트 - Toshiba
제조사

Toshiba
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS
CHOPPER REGULATOR, DC/DC CONVERTER AND MOTOR DRIVE APPLICATIONS
● 4 V gate drive
● Low drain-source ON-resistance : RDS (ON) = 0.12 Ω (typ.)
● High forward transfer admittance : |Yfs| = 5.0 S (typ.)
● Low leakage current : IDSS = 100 μA (max) (VDS = 60 V)
● Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mAL)
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV)
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV) ( Rev : 1999 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2010 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
Toshiba