2SK1954 데이터시트 - KEXIN Industrial
제조사

KEXIN Industrial
MOS Field Effect Power Transistor
FEATUREs
Low on-resistance
RDS(on)=0.65 (VGS=10V,ID=2A)
Low Ciss Ciss=300pF typ
Built-in G-S Gate Protection Diode
High Avalanche Capability Ratings
MOS Field Effect Power Transistor
KEXIN Industrial
MOS FIELD EFFECT POWER TRANSISTOR
NEC => Renesas Technology
MOS Field Effect Power Transistor
TY Semiconductor
MOS Field Effect Power Transistor
Unspecified
MOS Field Effect Power Transistor
Unspecified
MOS Field Effect Power Transistor
Unspecified
MOS Field Effect Power Transistor
TY Semiconductor
MOS FIELD EFFECT POWER TRANSISTOR
NEC => Renesas Technology
MOS Field Effect Power Transistor
TY Semiconductor
MOS Field Effect Power Transistor
KEXIN Industrial