2SK1310 데이터시트 - Toshiba
제조사
Toshiba
RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
Output Power : Po ≥ 190 W (Min.)
Drain Efficiency : ηD = 65% (Typ.)
Frequency : f = 230 MHz
Push−Pull Structure Package
Silicon N-Channel MOS Type Field Effect Transistor
Toshiba
SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR ( Rev : 1998 )
Toshiba
Field Effect Transistor Silicon N Channel MOS Type
New Jersey Semiconductor
Silicon N-Channel MOS Type Field Effect Transistor ( Rev : 2006 )
Toshiba
Silicon N Channel MOS Type Field Effect Transistor
Toshiba
SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR
Toshiba
N-channel MOS Type Silicon Field Effect Transistor
SANYO -> Panasonic
Field Effect Transistor Silicon N-Channel MOS Type
Unspecified
Field Effect Transistor Silicon N Channel MOS Type
Toshiba
Field Effect Transistor Silicon N Channel MOS Type
Toshiba
