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2SJ669
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2SJ669(2006) 데이터시트 - Toshiba
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Relay Drive, DC/DC Converter and Motor Drive Applications
• 4-V gate drive
• Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.0 S (typ.)
• Low leakage current: IDSS = −100 μA (max) (VDS = −60 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
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