2SJ338 데이터시트 - Toshiba
제조사
Toshiba
Audio-Frequency Power Amplifier Applications
● High breakdown voltage : VDSS = −180 V
● High forward transfer admittance : |Yfs| = 0.7 S (typ.)
● Complementary to 2SK2162
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2008 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba
