2SJ305(1998) 데이터시트 - Toshiba
제조사
Toshiba
HIGH SPEED SWITCHING APPLICATIONS
ANALOG APPLICATIONS
• High Input Impedance
• Low Gate Threshold Voltage.: Vth = −0.5~−1.5 V
• Excellent Switching Times.: ton = 0.06 µs (Typ.) toff = 0.15 µs (Typ.)
• Low Drain-Source ON Resistance: RDS (ON) = 2.4 Ω (Typ.)
• Small Package.
• Complementary to 2SK2009
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type ( Rev : 2008 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( Rev : 2007 )
Toshiba
