2SJ304 데이터시트 - Toshiba
제조사

Toshiba

* 4 V gate drive
* Low drain−source ON resistance : RDS (ON)= 80 mΩ(typ.)
* High forward transfer admittance : |Yfs| = 8.0 S (typ.)
* Low leakage current : IDSS= −100 µA (max) (VDS= −60 V)
* Enhancement−mode : Vth= −0.8~−2.0 V (VDS= −10 V, ID= −1mA)

P CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
Toshiba
P CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
Toshiba
P CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
Toshiba
DC−DC Converter, Relay Drive and Motor Drive Applications
Toshiba
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
Toshiba
Chopper Regulator, DC/DC Converter and Motor Drive Applications
Kersemi Electronic Co., Ltd.
K2746, 2SK2746 / N Channel MOS/ DC−DC Converter and Motor Drive Applications
Toshiba
HIGH SPEED HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR AND DC-DC CONVERTER AND MOTOR APPLICATION
Toshiba
High Current Drive Applications ( Rev : V2 )
KEXIN Industrial
High Current Drive Applications
TY Semiconductor