
Renesas Electronics
P-CHANNEL MOSFET FOR SWITCHING
The 2SJ198 is a p-channel vertical type MOS FET switching device which can be directly driven from an IC operating with a 5 V single power supply. The device featuring low ON-state resistance is of the voltage drive type and thus is ideal for driving actuators such as motors, solenoids, and relays.
FEATURES
• Low ON-state resistance
RDS(on) = 2.5 Ω MAX. at VGS = -4 V, ID = -0.5 A
RDS(on) = 2.0 Ω MAX. at VGS = -10 V, ID = -0.5 A
• Voltage drive at logic level (VGS = -4 V) is possible.
• Bidirectional zener diode for protection is incorporated in be-tween the Gate and the Source.
• Inductive loads can be driven without protective circuit thanks to the improved breakdown voltage between the Drain and Source.
• Complementary to 2SK1484