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2SD886
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Jiangsu Changjiang Electronics Technology Co., Ltd
2SD886 데이터시트 - Jiangsu Changjiang Electronics Technology Co., Ltd
Jiangsu Changjiang Electronics Technology Co., Ltd
TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 1 W (Tamb=25℃)
Collector current
ICM: 3 A
Collector-base voltage
V(BR)CBO: 50 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
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제조사
TO-126 Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-126 Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-126 Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-126 Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
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