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2SD386 PDF
2SD386 데이터시트 - Shenzhen SPTECH Microelectronics Co., Ltd.
제조사

Shenzhen SPTECH Microelectronics Co., Ltd.
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)
• Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 1.0A
APPLICATIONS
• Designed for TV vertical deflection output applications.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor