2SD288 데이터시트 - Kwang Myoung I.S. CO.,LTD
제조사

Kwang Myoung I.S. CO.,LTD
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 55V (MIN)
• Collector Power Dissipation-
: Pc = 25W(Max)@ Tc =25°C
APPLICATIONS
• Designed for power regulator, low frequency high power amplifier applications.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor